Главная Журналы Популярное Audi - почему их так назвали? Как появилась марка Bmw? Откуда появился Lexus? Достижения и устремления Mercedes-Benz Первые модели Chevrolet Электромобиль Nissan Leaf Главная » Журналы » Absorbing materialorganic polymer1 ... 52 53 54 55 А РI XANSWERS ТО SELECTED PROBLEMSChapter 1LI {a) 4 atoms, (h) 2 atoms, (c) 8 atomsL3 {a) 52.4 percent, (h) 14 percent, (c) 68 percent, [d) 34 percent1.5 (a) 2.36 A, {b) 5 X 10 atoms/cmL7 ib) a = 2.8 A, (c) 2.28 x 10- cm - for both Na and CI, № 2.21 gmWL9 (a) 3.31 X lO * atoms/cm-; Same for A atoms and В atoms, (b) Same as (й). (с) Same material.ЫЗ {a) 5.63 A, Ф) 3.98 A, (c) 3.25 A1.15 {a) 6.78 X 10 cm--, {b) 9.59 x 10 cm-\(r)7.83 X 10 cm-L17 2 X 10 cm-1.19 ia) 4 X 10 percent, (b) 2 x 10 percent 1.21 cl = 1.94\ n\ cm ord/oo = 146Chapter 22.5 2.7л = 0.254 m (gold), X = 0.654 цт (cesium)3- 0.01727 eV, P = 7.1 X 10- kg-m/s, л = 93.3 A(a)E = IA4 X JO eV, p = 1.82 X lO- kg-m/s, Л = 364 A(b) p = 5.3 X 10- kg-m/s, i; = 5.82 X 10 cm/s, £ = 9.64 x 10 eV(a) Д/? = 1.054 X 10- kgm/s(/7) Д£; = 0.198 eV2.13 {a) Ap = 8.78 x 10 kg-m/sib) AE = 4.82 X 10- eV2Л5 {a)Ap= 1.054 x lO kgm/s2.112.17 A= 1, or Л =+1,-L-hy.-72.19 (a) P = 0.393, (/;) P = 0.239, (c) P = 0.8652.21 Ф л) = A expl - j {kx -\-cot)] where it = 6.27 x 10** m and CO = 2.28 x 10 rad/s2.23 (a) £] = 0.261 eV, £3 = 1.04 eV,{b)X= ].59pm2.25 £i = 2.06 X !0 eV (neutron), £1 - 3.76 X 10 eV (electron)2.29 (b) (i) A£ = 3.85 X JO-- cV, (п)АЕ = 2Ав X 10- cV2.31 (й)Р = 0.118 percent,(/?) P = 1.9 x 10- percent2.33 (a) Г = 0.138,(7) T 1.27 X 10--2.38 El = -13-58 eV, E. = -3.395 eV, £3 = -L51 eV, £4 = -0.849 eVChapter 33.9 (a)AE 0.488 eV, (i?) A£ = 1.87 eV, (c) AE = 3.83 eV, (d) AE = 6.27 eV3.11 (a) AE = 0.638 eV, (b) AE = 2.36 eV, (c) Д£ = 4.73 eV, (d) AE 7,39 eV3.13 m* (A) < m (Б)3.15 A, B: velocity = - x; C, D: velocity = +x; B, C: positive mass; A, D: negative mass3.17 A: m/mo = 0.476; B: m/mo = 0.09533.23 g = 3.28 x 103.25 ( )At £ , =0;0.05 eV,>, = 1.71 X 10- cm- eVih) At = 6.6 X 10O.lOeV, g, = 2.41 X I0- cm- eVr-l .0.15 eV, gr = 2.% X 10 cm еУ- 0.20еЧ, = 3.41 X 10 cm eV ,(h)At E g =0,-0.05 eV, g, = 0.637 x 10 cm- еУ- -O.lOeYg, =0.901 X 10 cm-eV-; -0.15 еЧ, = 1.10 X 101 cm-- eV ; -00.20 eV, g, = 1.27 X 10- cm еУ-3.29 (a) f{E) = 0.269, (b) 1 - /(£) = 0.2693.31 (a) 1 - /(£) = 0.269,(b) 1 -/(£):= 6.69 X 10-(c) 1 - /(£) = 4.54 X 10- 3.37 ia) f{E) = 6.43 x 10- percent,(b) /(£) = 4.53 percent, (c) Г 756 К3.39 ( )For £ = £ /(£) =9.3 X 10-For £ = £2, 1 ~ /(£) = 1.78 X 10-i\(b) For £ = £ /(£) = 8.45 x 10 ; For£ = £2, 1 -/(£) = 1.96 x 10-3.43 Г 461 КChapter 44.1 (a) ni = 7.68 X 10 cm-; 2.38 x 10- cm-; 9.74 X 10 cm-,(b)ni = 2.16 X 10** cm--; 8.60 x 10 cm- 3.82 X 10 cm-\{c)n, = 1.38 cm- 3.28 x 10 cm-;4.8 4Л05.72 X 10 cm- kT{a)E = E, + -(b)E = E -= 47.5En - £midgap = -0.0128 eV (Si) Efi - £rnidg.p = -0.0077 eV (Ge) Efi - £midg.p = +0.038 eV (GaAs) 4.12 Efi - £ijgp = -8.51 meV, -17.0meV, -25.5 meV4.17 Г] 104 A, £ = 0.0053 eV4.19 = 2.13 X 10- cm-,/7o = 2.27 x 10 cm-4.21 E, -Ef = 0.88 eV, 0 = 4.9 x 10 cm-4.23 (fl) = 1.33 X 10 cm-,Ф) Ep, - Ef = 0.207 eV,(c) For (fl) По 2.44 cm -; For(;?)fi[, = 8.09 X 10 cm4.25 £,- -Ef = -0.034 eV4.27 (fl) o = 2.45 X 10/0 =9.12 X 10 cm--4.294.314.334.35 4.414.434.45 4.49 4.51(fl) =2.95 X 10*3 cm, 0 = F95 X 10* ст--,(/?)ло = 5 x 10 cm- = 1.15 X 10* cm (fl)f7o = 2 X 10* cm--. A) = F125 x 10 cm Ф) = 10 cm, 0 = 2.25 x 10 cm-\ (c) Ли = Po = rtf = 1-5 X 10** cm .{d)p = 1.0 X 10* cm 0 = 5.66 X 10 cm{е)щ = 1.49 X 10 cm-3 Po =4.89 X 10 cm-3 (fl) p type, Ф) Si: po = 1.5 x 10*3 -з^ 0 = 1.5 X 10 cm-3, Ge: Po = 3.26 X 10 cm--\ 0 = 1.77 X 10 cm-, GaAs:= 8.04 x 10 cm-Po = 1.5 X 10* cm-3, 0 = 0.216 cm 0 = 1.125 X 10 cm--, n-type(fl) n type; 0 = 10 cm-, Po = 2.25 X 10 cm-, ф) p-type; Po = 2.8x10Г = 200 К = Ef, - Ef = 0.1855 eV Г = 400 К = En - Ef ОтШ eV 7 = 600 К = Ef, - Ef 0.000674 eVГ 762 КЛ^ = 1.2 x 10** cm- (fl) Ef - Ef, = 0.2877 eV, Ф) Efi - Er = 0.2877 eV, (c) For (fl)2.25 X 10 cm0.1291 eV,ф}по = 1.87 X 10 cm Po = 9.20 X 10 cm-- 0 = 10 cm-3, For(/;)/io 4.53 (fl) Ef - Ef, = 0.3056 eV, Ф) EFi - Ef= 0.3473 eV, (c) Ef = Efi , {d) Efi ~ Ef = (e) Ef - EFi = 0.0024 eV 4.55 p type, Efi - E 0.3294 eVChapter 55.1 {a) no = 10* cm-, Po = 3.24 x 10 cm-Ф) p 7500 cmVV-s so7 = 120 A/cm ic) (i) po = 10 cm-,/70 = 3.24 X lO-cm-3;(ii) pp 310cmA-sso J = 4.96 A/cm(a) I = 0.44 mA, ф) I - 4.4 mA,(c) For (fl) Vd = 5.5 X lO* cm/s. For Ф) ?v = 5.5 X 10 cm/s{a) fi = 3333 cmW-s,Ф) v,i = 2.4 X 10 cm/s(fl)cr; = 4.39 X 10 * (Q-cm) ,ф)а{ = 1.03 X lO- (Q-cm)-*5.115.13 5.17 5.19 5.23 5.255.27 i(300 K) = 3.91 X 10 cm- E. = 1.122 eV; rt,(500K) =2.27 X 10 cm-\ a(500 K) = 5.81 X 10-- (fi-cm)-i(a)Nd=9.26 X 10- cm-\(b) p(200 K) 2.7 Q-cm, p 9.64 Q-cm(a) Г = 5.6 X 10-* еЧ (b) T 5.6 x IQ- eV p - 316cm/V-s Д = 167 cm/V-s / = 18 mA J = 16A/cm2J, = 3.41 expV22.5A/cm 5.29 (a) Jhijf = 1,6 expAJcnr,W.,/ = 4.8- 1.6 expA/cm\(c)E =5.31 {a)n = hf exp1 - exp y-j V/cm 0.4-2.5 X lOjcl(h) J = -5.79 X 10-* expГ0.4-2.5 X lOr5.33 5.355.39 5.415.430.0259(0 JAx = 0) = -2.95 X 10 A/cm\ 00 Jnix = 5 pm) = -23.7 A/cm N{x) = A exp {-ax) where Of = 3.86 X 10- cm(a) = 2.19 mV, (b) E =0.219 V/cmia) p type, ib) p = 8.08 x 10 cm-\{b) = 387 cmVV-s{a) n type, (b) n 8.68 x 10 cm-\(c) p = 8182cm-/V-s,(d) p = 0.88 Q-cmChapter 66Л = 5 X 10 cm- s- 6.3 (a) r o = 8.89 X 10 s.-3 -16.7 6.9{b)G= 1.125 X 10 cm-s (c)G = R 1.125 X 10 cm s 3E-5 .,-1= -2 X 10 cm- s D = 58.4 cm/s, p = -868 cmVV-s, T o 54 s, tpo = 24/xs6.11 6.13 6.156.176.19G =8 + 0.114(1 -€i>),TVi = 10- s / = (54 + 2.206-) mA, r,o = 3 x I0- s(a) = 4.44 x 10,(b) г^,o = 2.25 x 10- s( )ForO < / < 2 X 10-Sn =10 (\- -/- 0) where т„о = 10- s:For? > Г = 2 X 10-a = 0.865 X 10* exp ~(й)п/,о = 2.25 X 10 cm\ (b)Sn(0) - = 2.25 X 10 cm-(c) Sn6.25 For-L < jt < +L,5p (5L - jc);2D, For L < л < 3L, 6p -(3L - л);6.296.316.336.37For-3L о(т(Л) 2 Lbchanges in space charge width.; ic) neglectHB) SiA)Ло expedbribo Xb10.25 10.2710.29 10.3510.39 10.4110.43 10.4510.47 10.535(C)Ло expервпви Xb(d) Device СФ) /с - 1.19 mA, /£ = 0.829 mA(a) 8 =ib)fi ={ -Vbe 1 + 15.38expf-Ь1 -Ь0518, (с) for Vbe < 0,4 V,recombination factor will be the limiting factor in current gain,ia) Xb 0.742 дт, (b) Ь = 0.9999994ia) K4 = 47.8 V, ib) = 33.4 V, ic) Va = 19.0 V(a) R = 893 ф) V = 8.93 mV, (c) 70.8 percent. . kT(a)E = -(с) Total solution is-\- пц (0) exp(-Ax)ep Ewhere Aпя(0) =) ep,\Nb(0) \ V, J ep EBVcBo = 221 V, Nc - 1,5 x 10 cm-\ Xc = 6.75 pmia) Vpt = 295 V; however, junction breakdown for these doping concentrations is V 70 V, so punchthrough will not be reached.(a) I в = 0.105 mA, ib) = 11-9 дА, ic) I в = 10.14 дАfr = 509 MHzChapter 1111.1 (a) p type, inversion; Ф) p type, depletion;(f) p type, accumulation; (d) n type, inversion 11,3 ia) By trial and error,Nd = 3.27 X 10- cm-\ih) 0, = -0.518 V11.5 ia) N = 4.98 x 10 cm- {b) cannot use p+ poly gate, (c) Nd = 3.43 x 10 cm11.7 Q,Je= 1.2 x 10 cm-11.9 Vp = -1.44 + фп,., (a) Vp = -1.76 V,ib) Vtp =-1.11 V, (c) Vtp = -0.592 V11.11 11.13 11.15 11.2111.2311.27By trial and error, N = 1.71 x 10 cm (a) Vfb = -\-52 V, (b) Vr = -0.764 V ib) ф„,. = - Ll 1 V, ic) Vj- = +0.0012 Via) Cox = 8.63 X 10- F/cm, Ср=ЪЛ2 10- F/cm C; = 0.797 X 10- F/cm C(inv) = Q,ib) Same as (a) except C(inv) (c) Vtp = -0.989 V {a)AVfB =-1.74 V, ф) A Vfb = -0.869 V, a) AVfB = -1.16 V {a) n type, и = 345 A,11.3111.37 11.39 11.41 11.43 11.47ic) e;. = 1-875 x 10 cm {d)cfb = 156pF VsG = 1 V, /л (sat) = 0.00592 inA; Vsc = 3 V, J(saO = 0.716 mA; V-f; = 5 Ч /л (sat) = 2.61 mA 0.2 V, д = 342 cm/V-s (Д) W/JL = 14.7, (b) W/L = 25.7 (a) g f = 0.148 mS, ib) g , , = 0.947 mS Vbs = 1.92 Via) It =5M GHz, ib) fj = LO GHzChapter 1212.1 b = 10-*-exp(2.\)vJJr = a0)lo,P = h- Vj;;;for =0.5 V,lo = 9.83 pA, h = 9.83 дА,P = 49.2 д\У; for Vf; = 0.7 V,lo = 0.388 nA, It = 0.388 mA,P = 1.94 mW; for Vas = 0.9 V,I о = 15.4 nA, It = 15.4 mA, P = 77 mW12.3 (a) AVos = 1 V, AL = 0.0451 дт; AVoi- = 3 V, AL = 0.122 дт; AVos = 5 V, AL = 0.188 дт; Ф)Е= 1.88 дт12.7 (a) Assume ViJi(sat) = 1 V; thenL = 3 дт => Es,i = 3.33 x lO V/cmL = 1 дт=Е,,= 10 V/cmL = 0.5 дт = E,at = 2x10 V/cm(&) Assume д^, = 500 cin-/V-s, L = 3 дт V = 1,67 X 10* cm/s12.17 12.23 12.27 12.31 12.3312.3512.37L = 1 дт V = 5 X 10 cm/sL < 0.5 дт =v iO cm/s 12.13 ia) Both bias conditions, fp kit),ib) FkP 12.15 ia)ii) I о = 1.764 mA;07) I о = 0.807 mA:ib) ii) P = 8.82 mW, (/7) P = 2.42 mW;ic) current: 0.457; power: 0-274 L = 1.59 дт AVr = +0.118 V (fl)V5o = 15V,(;7)Vc=5V L = 0.844 дт(я) Vr = -0.478 V, (ip) implant acceptors, Di =4.25 X 10 cm- (a)Vr = -0.624 V, ib) implant acceptors, Dl = 4.37 X 10 cm- (c) Vt = 1.24 V ia) Vr = -1.53 V; enhancement PMOS, (b) implant acceptors, Dl =4.13 X 10- cm- 12.39 AVy=-2.09 VChapter 1313.3 ia) Vp = 4.91 V, ib) for V = 1 Y (/) a - h = 02\5 дт, iii) a - h= 0.0653 дт, (/77) a -h - -0.045 дт (zero depletion width)ia) Vpo = 15.5 V, ib) Vcs = -4-66 V (fl) Vpo = 1-863 V, Vp =0.511 V; ib)ii)a-h =4.45 X 10- cm, iii)a-h = 1.70 X 10- cm (fl) For Vos = 0, Vos = -1.125 V;ib) For Vos = 1 V, Vcs = -0.125 V Vcs = 0, = 0.523 X 10--; Vg.s = -0-53 V, g = 0.236 X 10-; Vcs - -E06 V, g, = 013.13 , .v(niax) =1.31 mS/mm13.15 (fl) Vpo = 2.59 V, Vr = -1.78 V,ib) depletion mode 13.17 Vos = 0, fl - /г = 0.716 дm;Vos = 2V,a-h= 0.545 дт;Vos = 5 V, fl - /7 = 0.410 дт 13.19 Nj 5.45 X 10* cm- 13.21 (fl) V, =0.612 V, V,4j = 2.47 V,Vr = -1.86 V, Vzjs4sat) = 0.858 V,(b) add donors, = 1.64 x 10* cm ;13.5 13.713.913.11Vbi = 0.628 Ч Vf = -3.87 V,V4sat) = 2-87 V 13.23 (n) W = 26A дт; (b) for Vcs = OA V, >, = 78.8 дА; for Vcs = 0-65 Ч/о i (sat) = 0.56 mA 13.29 (a) With vek>city saturation,(sat) = 4.86 mA; without velocitysaturation, /iji(sat) =18.2 mA 13.31 (a) и = 20 ps, (b) td = 20 ps 13.33 (a) g , = 2.82 mS, (b) = 88.7(c) L = 0.67 дт 13.35 ia) fr = 155 GHz, (/?) fj = 15.9 GHz 13.37 ia) g /W = 502 mS/mm,[h) bi (sat)/W = 537 mA/mmChapter 1414.1 {a)X=\,24/E(0£=0.66= a= 1.88 дт(ii) E = 1.12 л = 1.11 дт(iii) E=\A2X= 0.873 дт (h) (OA = 570 nm= £ = 2.18eV14.3 14.5 14.1114.1314.15( ) л = 700 nni £ = 1.77 eV Sn gr = 1.44 x 10 cm (a) X = 1.98 дт, (b) x = 0.41 дт и = 500 mA, V , = 0.577 V, / , = 478.3 mA, R = 276 mWFor/zv - 1.7 eV, x = 2.3 дт; ¥orhv 2.0 eV, x = 0.23 дт(a) Sp = Sn = 10 cm-\(b) Aa = 1.32 x 10- (Q-cm) ,(c) = 0.66 mA, (d) Vp =4.1314.1714.19(a) Ju = 9.92 mA/cm,(/?) Jl = 0.528 A/cm-W = 1 дт 7/, =4.15 mA,W \Opm= Jl = 15.2 mA,14.21 14.23W = 100 дт Л = 16 mA,0.625 < Л < 0.871 дт(a) 8.83 percent, (b) 5.95 percentChapter 1515.1 /с =5.33 a15.7 Vc с = 25 v15.9 (a) h = 1-84 a, h = 1.66 a, h = 1-51 a;Pi = 6.09 W, P2 = 5.48 W, P3 = 4.98 W(b)L =2.16 a, a = 1.08 a, h = 1.77 a;P] = 8.38 W, Pn = 4.19 W, P3 = 6.85 W 15.11 (h)(i) Vgs--S у I о = 0.25 a, Vns = 37.5 v,P = 9.38 W(/0 Vt;5 = 6 v, /£> = 1.0 a, V/,i = 30 v, P = 30 W(iii) Vcs = 7 v, Iiy = 2.25 a, V. = 17.5 v, P = 39.4 W(/v) Vcs = 8 v, Ь = 4.0 a, Vps = 2.92 v, P = 11.7 W(v) Vas = 9 v, = 6.25 a, Vos = 1-88 v, P = 11-7 Wz,. J Incase-ашЬ 15.15 c.se b =4C/W1 ... 52 53 54 55
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